BSS7728N H6327

Rev. 2.5 BSS7728N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V • Enhancement mode RDS(on) 5 Ω • Logic Level ID 0.2 A • dv/dt rated PG-SOT-23 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 • Halogen-free according to IEC61249-2-21 Type Package BSS7728N PG-SOT-23 Source pin 2 Pb-free Tape and Reel Information Marking Yes H6327: 3000 pcs/reel sSK Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C 0.2 TA=70°C 0.16 I D puls 0.8 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Page 1 2011-07-11 Rev. 2.5 BSS7728N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJA K/W at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 1.3 1.9 2.3 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250µA Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - - 5 I GSS - 1 10 nA RDS(on) - 4.3 7.5 Ω RDS(on) - 2.7 5 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.05A Drain-source on-state resistance VGS=10V, ID=0.5A Page 2 2011-07-11 Rev. 2.5 BSS7728N Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.1 0.2 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.16A Input capacitance Ciss VGS=0, VDS=25V, - 37 56 Output capacitance Coss f=1MHz - 7.3 11 Reverse transfer capacitance Crss - 2.9 4.4 Turn-on delay time td(on) VDD=30V, VGS=10V, - 2.7 4 Rise time tr ID=0.2A, RG=6Ω - 2.7 4.1 Turn-off delay time td(off) - 6.1 9.1 Fall time tf - 9 13 - 0.12 0.18 - 0.43 0.65 - 1 1.5 V(plateau) VDD =48V, ID = 0.2 A - 3.8 - V IS - - 0.2 A - - 0.8 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =48V, ID =0.2A VDD =48V, ID =0.2A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF=IS - 0.84 1.2 V Reverse recovery time trr VR=30V, IF =lS , - 11.5 17.5 ns Reverse recovery charge Qrr diF/dt=100A/µs - 2.6 4 nC Page 3 2011-07-11 Rev. 2.5 BSS7728N 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V BSS7728N 0.38 0.22 W A 0.32 0.18 0.28 0.16 0.24 0.14 ID Ptot BSS7728N 0.12 0.2 0.1 0.16 0.08 0.12 0.06 0.08 0.04 0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 BSS7728N 10 °C 10 3 BSS7728N K/W A 10 2 100 µs / ID ID =V R 10 ZthJA 10 t = 33.0µs p 0 DS 1 ms ) (on DS -1 10 1 10 ms D = 0.50 10 0 0.20 0.10 10 0.05 -2 0.02 10 -1 DC 0.01 single pulse 10 -3 10 0 10 1 V 10 2 VDS 10 -2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2011-07-11 Rev. 2.5 BSS7728N 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 10 0.8 Ω 10V 7V 6V 5V 0.6 4.5V 4.1V 3.7V 0.5 3.5V 3.1V 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V 8 RDS(on) ID A 7 6 5 0.4 4 0.3 3 0.2 2 0.1 0 0 1 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 0.1 0.2 0.3 0.4 0.5 0.6 VDS A 0.8 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.4 0.8 S A 0.32 0.6 gfs ID 0.28 0.5 0.24 0.2 0.4 0.16 0.3 0.12 0.2 0.08 0.1 0 0 0.04 1 2 3 4 V 0 0 6 VGS 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 ID Page 5 2011-07-11 Rev. 2.5 BSS7728N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.5 A, VGS = 10 V parameter: VGS = VDS ; ID =26µA BSS7728N 15 2.8 12 V 98% 11 Vgs(th) RDS(on) Ω 10 9 8 typ. 1.8 7 6 98% 5 2% 4 1.3 3 typ 2 1 0 -60 -20 20 60 100 °C 0.8 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 2 10 0 BSS7728N A Ciss pF C IF 10 -1 10 1 Coss 10 -2 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 VDS 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2011-07-11 Rev. 2.5 BSS7728N 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , V(BR)DSS = f (Tj ) ID = 0.5 A pulsed, Tj = 25 °C 16 BSS7728N BSS7728N 72 V V(BR)DSS V VGS 12 10 0.2 VDS max 0.5 VDS max 68 66 64 8 0.8 V DS max 62 6 60 4 58 2 0 0 56 0.2 0.4 0.6 0.8 1 1.2 1.4 nC 1.8 QG 54 -60 -20 20 60 100 °C 180 Tj Page 7 2011-07-11 Rev. 2.5 BSS7728 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2011-07-11